InP

Indium phosphide
Names


Other names Indium(III) phosphide
Identifiers
CAS Number	22398-80-7^Y
3D model (Jmol)	Interactive image
ChemSpider	28914^Y
ECHA InfoCard	100.040.856
PubChem	31170
InChI InChI=1S/In.P^Y Key: GPXJNWSHGFTCBW-UHFFFAOYSA-N^Y InChI=1/In.P/rInP/c1-2 Key: GPXJNWSHGFTCBW-HIYQQWJCAF
SMILES [In]#P
Properties
Chemical formula	InP
Molar mass	145.792 g/mol
Appearance	black cubic crystals
Density	4.81 g/cm³, solid
Melting point	1,062 °C (1,944 °F; 1,335 K)
Solubility	slightly soluble in acids
Band gap	1.344 eV (300 K; direct)
Electron mobility	5400 cm²/(V·s) (300 K)
Thermal conductivity	0.68 W/(cm·K) (300 K)
Refractive index (n_D)	3.1 (infrared); 3.55 (632.8 nm)
Structure
Crystal structure	Zinc blende
Lattice constant	a = 5.8687 Å
Coordination geometry	Tetrahedral
Thermochemistry
Specific heat capacity (C)	45.4 J/(mol·K)
Std molar entropy (S^o₂₉₈)	59.8 J/(mol·K)
Std enthalpy of formation (Δ_fH^o₂₉₈)	-88.7 kJ/mol
Hazards
Main hazards	Toxic, hydrolysis to phosphine
Safety data sheet	External MSDS
Related compounds
Other anions	Indium nitride Indium arsenide Indium antimonide
Other cations	Aluminium phosphide Gallium phosphide
Related compounds	Indium gallium phosphide Aluminium gallium indium phosphide Gallium indium arsenide antimonide phosphide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Y (what is ^YN ?)
Infobox references

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.

InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.

It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.

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