Isamu Akasaki
| Isamu Akasaki | |
|---|---|
Isamu Akasaki
|
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| Native name | 赤崎 勇 |
| Born |
January 30, 1929 Chiran, Kawanabe District, Kagoshima Prefecture |
| Nationality | Japanese |
| Fields | Physics |
| Institutions |
Meijo University Nagoya University |
| Alma mater |
Kyoto University Nagoya University |
| Notable awards |
Asahi Prize (2001) Takeda Award (2002) IEEE Edison Medal (2011) Nobel Prize in Physics (2014) Charles Stark Draper Prize (2015) |
Isamu Akasaki (赤崎 勇 Akasaki Isamu?, born January 30, 1929) is a Japanese physicist, specializing in the field of semiconductor technology and Nobel Prize laureate, best known for inventing the bright gallium nitride (GaN) p-n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as well.
For this and other achievements Isamu Akasaki was awarded the Kyoto Prize in Advanced Technology in 2009 and the IEEE Edison Medal in 2011. He was also awarded the 2014 Nobel prize in Physics, together with Hiroshi Amano and Shuji Nakamura, "for the invention of efficient blue light-emitting diodes, which has enabled bright and energy-saving white light sources".
Born in Kagoshima Prefecture, Akasaki graduated from Kyoto University in 1952, and obtained a Dr.Eng. degree in Electronics from Nagoya University in 1964. He started working on GaN-based blue LEDs in the late 1960s. Step by step, he improved the quality of GaN crystals and device structures at Matsushita Research Institute Tokyo, Inc.(MRIT), where he decided to adopt metalorganic vapor phase epitaxy (MOVPE) as the preferred growth method for GaN.
In 1981 he started afresh the growth of GaN by MOVPE at Nagoya University, and in 1985 he and his group succeeded in growing high-quality GaN on sapphire substrate by pioneering the low-temperature (LT) buffer layer technology.
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